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  re v f e ? x x x x o r m a a b d g d d s i r e r e p o j u s t * l v . date: 24- s e atures logic leve l max. r ds(o n low r ds(on) esd prote c halogen f r r dering i n part nu m snn01 z a rking in f b solute m rain-source v g ate-source v rain current rain current i ngle pulsed e petitive av a e petitive av a o wer dissip a u nction tem p t orage tem p l imited only m snn 0 s ep- 12 l l gate driv e n ) = 135m a provides h i c ted: 1000 v r ee and ro h n formati o m ber z 60q f ormatio n m aximum characte v oltage v oltage (dc) * (pulsed) * avalanche e a lanche cur r a lanche ene a tion p erature p erature ran g m aximum jun c 0 1z60 yww l ogic l e e a t v gs = 10 v i gher effici e v (hbm 5 0 0 h s complia n o n markin g snn01z 6 n ratings ( t ristic e nergy (note 2) r ent (note 1) rgy (note 1) g e c tion temper a column 1 column 2 e.g.) y w -. y: y -. w w k s e vel g a v , i d = 0.5a e ncy 0 v) n t device g 6 0 t c =25 c unle s a ture 1 : device co d 2 : productio n w w y ear code w : week cod e s d-t5a014- 0 a te dri package sot-223 s s otherwise n sym b v d s v g s i d t t i d m e a s i a r e a r p d t j t s t d e n information e 0 00 v e ap p n oted) b ol s s s s t c =25 c c =100 c m s r r d j t g g s n logic l e p licati o rat i 6 0 2 1 0. 6 4 3 5 1 0. 1 1. 1 5 -55~ g s d n n01 z e vel n-ch p o o n i ng 0 2 0 6 3 4 5 1 8 8 5 0 150 sot-223 d www .auk.c o 1 o z 60 q o wer mosf e unit v v a a a mj a mj w c c o .kr o f 8 q e t
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to ambient r th(j-a) max. 69 c/w * when mounted on the minimum pad size recommended (pcb). electrical characteristics (t j =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0v 60 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 1 - 2.5 v drain-source cut-off current i dss v ds =60v, v gs =0v - - 1 ua gate leakage current i gss v ds =0v, v gs = 20v - - 10 ua drain-source on-resistance r ds(on) v gs =10v, i d =0.5a - 90 135 m v gs =4.5v, i d =0.5a 109 165 m forward transfer conductance (note 3) g fs v ds =10v, i d =0.5a - 3 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 314 - pf output capacitance c oss - 28 - reverse transfer capacitance c rss - 21 - turn-on delay time (note 3,4) t d(on) v ds =30v, i d =1a, r g =25 ? - 4.7 - ns rise time (note 3,4) t r - 6.9 - turn-off delay time (note 3,4) t d(off) - 22.1 - fall time (note 3,4) t f - 6.1 - total gate charge (note 3,4) q g v ds =48v, v gs =10v, i d =1a - 8 10 nc gate-source charge (note 3,4) q gs - 1.1 - gate-drain charge (note 3,4) q gd - 1.7 - source-drain diode ratings and characteristics (t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 1 a source current (pulsed) i sm - - 4 a forward voltage v sd v gs =0v, i s =1a - - 1.2 v reverse recovery time (note 3,4) t rr i s =1a, v gs =0v di s /dt=-100a/us - 25 - ns reverse recovery charge (note 3,4) q rr - 18.8 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=35mh, i as =1a, v dd =50v, r g =25 , starting t j =25 c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operat ing temperature typical characteristics snn01z60 q
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 3 of 8 electrical characteristics curves fig. 1 i d - v ds fig. 2 i d ? v gs fig. 3 r ds(on) - i d fig. 4 i s - v sd fig. 5 capacitance - v ds fig. 6 v gs - q g
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 4 of 8 snn01z60 q fig. 7 bv dss - t j fig. 8 r ds(on) ? t j fig. 9 i d - t c fig. 10 safe operating area fig. 11 transient thermal impedance
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 5 of 8 snn01z60 q fig. 12 gate charge test circuit & waveform fig. 13 resistive switching test circuit & waveform fig. 14 e as test circuit & waveform
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 6 of 8 snn01z60 q fig. 15 diode reverse recovery time test circuit & waveform
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 7 of 8 recommended land pattern (unit: mm) package outline dimensions snn01z60 q
rev. date: 24-sep- 12 ksd-t5a014-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication eq uipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicat ion are subject to change without notice. snn01z60 q


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